Fin field effect transistor and method for forming the same

Invention Grant

US08664064B2 Fin field effect transistor and method for forming the same 有权

Title translation: Fin场效应晶体管及其形成方法

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Patent Title: Fin field effect transistor and method for forming the same
Patent Title (中): Fin场效应晶体管及其形成方法
Application No.: US12926471

Application Date: 2010-11-19
Publication No.: US08664064B2

Publication Date: 2014-03-04
Inventor: Keunnam Kim , Makoto Yoshida
Applicant: Keunnam Kim , Makoto Yoshida
Applicant Address: KR Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Gyeonggi-do
Agency: Harness, Dickey & Pierce, P.L.C.
Priority: KR10-2006-0043169 20060513
Main IPC: H01L21/336
IPC: H01L21/336

Fin field effect transistor and method for forming the same

Abstract:

Example embodiments are directed to a method of forming a field effect transistor (FET) and a field effect transistor (FET) including a source/drain pair that is elevated with respect to the corresponding gate structure.

Abstract(Chinese):

示例性实施例涉及一种形成场效应晶体管（FET）和场效应晶体管（FET）的方法，该场效应晶体管（FET）包括相对于相应栅极结构升高的源极/漏极对。

Public/Granted literature

US20110092039A1 Fin field effect transistor and method for forming the same Public/Granted day:2011-04-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的