Invention Grant
US08664049B2 Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor material
有权
半导体元件形成在晶体衬底材料中并且包括嵌入式原位掺杂的半导体材料
- Patent Title: Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor material
- Patent Title (中): 半导体元件形成在晶体衬底材料中并且包括嵌入式原位掺杂的半导体材料
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Application No.: US12776879Application Date: 2010-05-10
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Publication No.: US08664049B2Publication Date: 2014-03-04
- Inventor: Stephan Kronholz , Roman Boschke , Vassilios Papageorgiou , Maciej Wiatr
- Applicant: Stephan Kronholz , Roman Boschke , Vassilios Papageorgiou , Maciej Wiatr
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Priority: DE102009021487 20090515
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
The PN junction of a substrate diode in a sophisticated SOI device may be formed on the basis of an embedded in situ doped semiconductor material, thereby providing superior diode characteristics. For example, a silicon/germanium semiconductor material may be formed in a cavity in the substrate material, wherein the size and shape of the cavity may be selected so as to avoid undue interaction with metal silicide material.
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