Invention Grant
US08664037B2 Method for forming pattern of metal oxide and method for manufacturing thin film transistor using the same
有权
用于形成金属氧化物图案的方法和使用该方法制造薄膜晶体管的方法
- Patent Title: Method for forming pattern of metal oxide and method for manufacturing thin film transistor using the same
- Patent Title (中): 用于形成金属氧化物图案的方法和使用该方法制造薄膜晶体管的方法
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Application No.: US13527741Application Date: 2012-06-20
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Publication No.: US08664037B2Publication Date: 2014-03-04
- Inventor: Yong-Won Song , Jae-Min Hong , Jung Ah Lim , Hak-Sung Kim , Seong-Ji Kwon
- Applicant: Yong-Won Song , Jae-Min Hong , Jung Ah Lim , Hak-Sung Kim , Seong-Ji Kwon
- Applicant Address: KR Seoul
- Assignee: Korea Institute of Science and Technology
- Current Assignee: Korea Institute of Science and Technology
- Current Assignee Address: KR Seoul
- Agency: Ladas & Parry LLP
- Priority: KR10-2011-0060243 20110621
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Disclosed are a method for forming a metal oxide pattern and a method of manufacturing a thin film transistor using the patterned metal oxide. The method for forming a metal oxide pattern includes: preparing an ink composition including at least one metal oxide precursor or metal oxide nanoparticle, and a solvent; ejecting the ink composition on a substrate to form a pattern on the substrate; and photosintering the formed pattern. Herein, the metal oxide precursor is ionic.
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