Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12929966Application Date: 2011-02-28
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Publication No.: US08664010B2Publication Date: 2014-03-04
- Inventor: Yoshihisa Matsubara
- Applicant: Yoshihisa Matsubara
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-081070 20100331
- Main IPC: H01L21/428
- IPC: H01L21/428
Abstract:
An MTJ element is formed in a wiring layer located in a lower tier and yet application of heat to the MTJ element is suppressed. A first insulating layer is formed over a substrate. Subsequently, the MTJ element is formed over the first insulating layer. After that a first wiring is formed over the MTJ element. Thereafter, a second insulating layer is formed over the first wiring. Then a second wiring is formed in the superficial layer of the second insulating layer. The second wiring is heat treated by photoirradiation. A shield conductor is formed at the step of forming the second wiring.
Public/Granted literature
- US20110241142A1 Semiconductor device and manufacturing method of the semiconductor device Public/Granted day:2011-10-06
Information query
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