Invention Grant
US08663906B2 Silicon-containing composition for fine pattern formation and method for fine pattern formation using the same
失效
用于精细图案形成的含硅组合物及使用其的精细图案形成方法
- Patent Title: Silicon-containing composition for fine pattern formation and method for fine pattern formation using the same
- Patent Title (中): 用于精细图案形成的含硅组合物及使用其的精细图案形成方法
-
Application No.: US12733451Application Date: 2008-09-12
-
Publication No.: US08663906B2Publication Date: 2014-03-04
- Inventor: Ralph R Dammel , Wen-Bing Kang , Yasuo Shimizu , Tomonori Ishikawa
- Applicant: Ralph R Dammel , Wen-Bing Kang , Yasuo Shimizu , Tomonori Ishikawa
- Applicant Address: US NJ Somerville
- Assignee: AZ Electronic Materials USA Corp.
- Current Assignee: AZ Electronic Materials USA Corp.
- Current Assignee Address: US NJ Somerville
- Agent Sangya Jain
- Priority: JP2007-236974 20070912
- International Application: PCT/JP2008/066556 WO 20080912
- International Announcement: WO2009/035087 WO 20090319
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/30 ; G03F7/40
Abstract:
The present invention provides a composition for forming a fine pattern with high dry etching resistance and a method for forming the fine pattern. The composition for fine pattern formation containing: a resin containing a repeating unit having a silazane bond; and a solvent as well as a method for fine pattern formation using the same.
Public/Granted literature
Information query
IPC分类:
