Invention Grant
- Patent Title: Photomask blank, method of manufacturing the same, photomask, and method of manufacturing the same
- Patent Title (中): 光掩模坯料，其制造方法，光掩模及其制造方法
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Application No.: US13201368Application Date: 2010-02-04
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Publication No.: US08663876B2Publication Date: 2014-03-04
- Inventor: Masahiro Hashimoto , Toshiyuki Suzuki , Hiroyuki Iwashita
- Applicant: Masahiro Hashimoto , Toshiyuki Suzuki , Hiroyuki Iwashita
- Applicant Address: JP Tokyo
- Assignee: Hoya Corporation
- Current Assignee: Hoya Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-030925 20090213
- International Application: PCT/JP2010/051625 WO 20100204
- International Announcement: WO2010/092899 WO 20100819
- Main IPC: C23C16/34
- IPC: C23C16/34 ; G03F1/22
Abstract:
A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide.
Public/Granted literature
- US20120045713A1 PHOTOMASK BLANK, METHOD OF MANUFACTURING THE SAME, PHOTOMASK, AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-02-23
Information query
IPC分类:
