Invention Grant
US08654595B2 Nonvolatile memory device with a clamping voltage generation circuit for compensating the variations in memory cell parameters
有权
具有用于补偿存储单元参数变化的钳位电压产生电路的非易失性存储器件
- Patent Title: Nonvolatile memory device with a clamping voltage generation circuit for compensating the variations in memory cell parameters
- Patent Title (中): 具有用于补偿存储单元参数变化的钳位电压产生电路的非易失性存储器件
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Application No.: US13604688Application Date: 2012-09-06
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Publication No.: US08654595B2Publication Date: 2014-02-18
- Inventor: Chan-Kyung Kim , Hong-Sun Hwang , Chul-Woo Park , Sang-Beom Kang , Hyung-Rok Oh
- Applicant: Chan-Kyung Kim , Hong-Sun Hwang , Chul-Woo Park , Sang-Beom Kang , Hyung-Rok Oh
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0091317 20110908
- Main IPC: G11C7/02
- IPC: G11C7/02
Abstract:
A nonvolatile memory device comprises a nonvolatile cell array comprising a memory cell and a reference cell, a clamping circuit electrically connected to the memory cell and configured to clamp a voltage applied to a data sensing line during a read operation, and a clamping voltage generation unit configured to generate a clamping voltage responsive to a first voltage having a level based on the reference cell, and to feed back the clamping voltage to the clamping circuit.
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