Invention Grant
US08654582B2 Non-volatile semiconductor memory device equipped with an oxide semiconductor writing transistor having a small off-state current
有权
配备有具有小截止电流的氧化物半导体写入晶体管的非易失性半导体存储器件
- Patent Title: Non-volatile semiconductor memory device equipped with an oxide semiconductor writing transistor having a small off-state current
- Patent Title (中): 配备有具有小截止电流的氧化物半导体写入晶体管的非易失性半导体存储器件
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Application No.: US13790351Application Date: 2013-03-08
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Publication No.: US08654582B2Publication Date: 2014-02-18
- Inventor: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-007482 20100115
- Main IPC: G11C11/40
- IPC: G11C11/40

Abstract:
An object is to provide a semiconductor device in which stored data can be retained even when power is not supplied, and there is no limitation on the number of write cycles. The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, a memory cell connected between the source line and the bit line, a first driver circuit electrically connected to the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line and the source line. The first transistor is formed using a semiconductor material other than an oxide semiconductor. The second transistor is formed using an oxide semiconductor material.
Public/Granted literature
- US20130201752A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-08-08
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