Invention Grant
- Patent Title: 10T SRAM cell with near dual port functionality
- Patent Title (中): 10T SRAM单元,具有近端口功能
-
Application No.: US13412773Application Date: 2012-03-06
-
Publication No.: US08654572B2Publication Date: 2014-02-18
- Inventor: Theodore W. Houston
- Applicant: Theodore W. Houston
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
An integrated circuit including an array of SRAM cells containing a write port with a write word line and two read buffers with read word lines. The write port includes passgate transistors connected to each data node of the SRAM cell. A process of operating the integrated circuit in which source nodes of read buffer driver transistors are biased during a read operation. A process of operating the integrated circuit in which source nodes of read buffer driver transistors are floated during a read operation. A process of operating the integrated circuit in which the write port and the read ports share data lines and the source nodes of read buffer driver transistors are floated during a write operation.
Public/Granted literature
- US20120163068A1 10T SRAM Cell with Near Dual Port Functionality Public/Granted day:2012-06-28
Information query