Invention Grant
US08654572B2 10T SRAM cell with near dual port functionality 有权
10T SRAM单元,具有近端口功能

10T SRAM cell with near dual port functionality
Abstract:
An integrated circuit including an array of SRAM cells containing a write port with a write word line and two read buffers with read word lines. The write port includes passgate transistors connected to each data node of the SRAM cell. A process of operating the integrated circuit in which source nodes of read buffer driver transistors are biased during a read operation. A process of operating the integrated circuit in which source nodes of read buffer driver transistors are floated during a read operation. A process of operating the integrated circuit in which the write port and the read ports share data lines and the source nodes of read buffer driver transistors are floated during a write operation.
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