Invention Grant
- Patent Title: Leakage-aware keeper for semiconductor memory
- Patent Title (中): 用于半导体存储器的漏电保护器
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Application No.: US13177711Application Date: 2011-07-07
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Publication No.: US08644087B2Publication Date: 2014-02-04
- Inventor: Jihi-Yu Lin , Li-Wen Wang , Wei Min Chan , Yen-Huei Chen
- Applicant: Jihi-Yu Lin , Li-Wen Wang , Wei Min Chan , Yen-Huei Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G11C7/10
- IPC: G11C7/10
Abstract:
A circuit includes a first circuit configured to sense a leakage of a first bit line and output a first signal in response, and a second circuit configured to receive the first signal output from the first circuit and in response supply current to a second bit line for maintaining a voltage level of the second bit line.
Public/Granted literature
- US20130010544A1 LEAKAGE-AWARE KEEPER FOR SEMICONDUCTOR MEMORY Public/Granted day:2013-01-10
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