According to one embodiment, there is provided a semiconductor memory device including a memory cell array, a plurality of signal lines, and a plurality of signal-line-lead-out portions. In the memory cell array, a plurality of memory cells are arranged. The plurality of signal lines connected to the plurality of memory cells. The plurality of signal-line-lead-out portions are arranged in a periphery of the memory cell array and are connected to the plurality of signal lines. Each of the plurality of signal-line-lead-out portions includes a plug as an electrode whose upper surface and side surface are covered with a passivation film.