Invention Grant
- Patent Title: Multi-level memory device using resistance material
- Patent Title (中): 使用电阻材料的多级存储器件
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Application No.: US12819498Application Date: 2010-06-21
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Publication No.: US08644062B2Publication Date: 2014-02-04
- Inventor: Ik-Soo Kim , Sung-Lae Cho , Do-Hyung Kim , Hyeong-Geun An , Dong-Hyun Im , Eun-Hee Cho
- Applicant: Ik-Soo Kim , Sung-Lae Cho , Do-Hyung Kim , Hyeong-Geun An , Dong-Hyun Im , Eun-Hee Cho
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2009-0073351 20090810
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC.
Public/Granted literature
- US20110032752A1 Multi-Level Memory Device Using Resistance Material Public/Granted day:2011-02-10
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