Invention Grant
US08644060B2 Method of sensing data of a magnetic random access memories (MRAM)
有权
用于检测磁随机存取存储器(MRAM)的数据的方法
- Patent Title: Method of sensing data of a magnetic random access memories (MRAM)
- Patent Title (中): 用于检测磁随机存取存储器(MRAM)的数据的方法
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Application No.: US13491159Application Date: 2012-06-07
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Publication No.: US08644060B2Publication Date: 2014-02-04
- Inventor: Ebrahim Abedifard , Parviz Keshtbod
- Applicant: Ebrahim Abedifard , Parviz Keshtbod
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLAW Group LLP
- Agent Maryam Imam
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A MTJ is sensed by applying a first reference current, first programming the MTJ to a first value using the first reference current, detecting the resistance of the first programmed MTJ, and if the detected resistance is above a first reference resistance, declaring the MTJ to be at a first state. Otherwise, upon determining if the detected resistance is below a second reference resistance, declaring the MTJ to be at a second state. In some cases, applying a second reference current through the MTJ and second programming the MTJ to a second value using the second reference current. Detecting the resistance of the second programmed MTJ and in some cases, declaring the MTJ to be at the second state, and in other cases, declaring the MTJ to be at the first state and programming the MTJ to the second state.
Public/Granted literature
- US20130329488A1 METHOD OF SENSING DATA OF A MAGNETIC RANDOM ACCESS MEMORIES (MRAM) Public/Granted day:2013-12-12
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