Invention Grant
US08644046B2 Non-volatile memory devices including vertical NAND channels and methods of forming the same
有权
包括垂直NAND通道的非易失性存储器件及其形成方法
- Patent Title: Non-volatile memory devices including vertical NAND channels and methods of forming the same
- Patent Title (中): 包括垂直NAND通道的非易失性存储器件及其形成方法
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Application No.: US12701246Application Date: 2010-02-05
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Publication No.: US08644046B2Publication Date: 2014-02-04
- Inventor: KwangSoo Seol , Sukpil Kim , Yoondong Park
- Applicant: KwangSoo Seol , Sukpil Kim , Yoondong Park
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec PA
- Priority: KR10-2009-0010546 20090210
- Main IPC: G11C5/02
- IPC: G11C5/02
Abstract:
A non-volatile memory device can include a plurality of immediately adjacent offset vertical NAND channels that are electrically coupled to a single upper select gate line or to a single lower select gate line of the non-volatile memory device.
Public/Granted literature
- US20100202206A1 NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND CHANNELS AND METHODS OF FORMING THE SAME Public/Granted day:2010-08-12
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