Invention Grant
- Patent Title: Through substrate via including variable sidewall profile
- Patent Title (中): 通过包括可变侧壁轮廓的衬底通孔
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Application No.: US12955429Application Date: 2010-11-29
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Publication No.: US08643190B2Publication Date: 2014-02-04
- Inventor: Edward Crandal Cooney, III , Peter James Lindgren , Doreen Jane Ossenkop , Anthony Kendall Stamper
- Applicant: Edward Crandal Cooney, III , Peter James Lindgren , Doreen Jane Ossenkop , Anthony Kendall Stamper
- Applicant Address: US CA San Jose
- Assignee: Ultratech, Inc.
- Current Assignee: Ultratech, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Peters Verny, LLP
- Agent Allston L. Jones
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture within a substrate. Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region at a surface of the substrate; (2) a constricted region contiguous with the first comparatively wide region; (3) a second comparatively wide region contiguous with the constricted region; and (4) a tapered region contiguous with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via that is filled into the aperture.
Public/Granted literature
- US20110068477A1 THROUGH SUBSTRATE VIA INCLUDING VARIABLE SIDEWALL PROFILE Public/Granted day:2011-03-24
Information query
IPC分类:
