Invention Grant
- Patent Title: Long-term heat-treated integrated circuit arrangements and methods for producing the same
- Patent Title (中): 长期热处理集成电路布置及其制造方法
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Application No.: US11589349Application Date: 2006-10-30
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Publication No.: US08643183B2Publication Date: 2014-02-04
- Inventor: Oliver Aubel , Wolfgang Hasse , Martina Hommel , Heinrich Koerner
- Applicant: Oliver Aubel , Wolfgang Hasse , Martina Hommel , Heinrich Koerner
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Priority: DE102004021239 20040430
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
An explanation is given of, inter alia, methods in which the barrier material is removed at a via bottom or at a via top area by long-term heat treatment. Concurrently or alternatively, interconnects are coated with barrier material in a simple and uncomplicated manner by means of the long-term heat treatment.
Public/Granted literature
- US20070105366A1 Long-term heat-treated integrated circuit arrangements and methods for producing the same Public/Granted day:2007-05-10
Information query
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