Invention Grant
- Patent Title: High breakdown voltage integrated circuit isolation structure
- Patent Title (中): 高击穿电压集成电路隔离结构
-
Application No.: US13174390Application Date: 2011-06-30
-
Publication No.: US08643138B2Publication Date: 2014-02-04
- Inventor: Zhiwei Dong
- Applicant: Zhiwei Dong
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: Law Offices of Maximilian R. Peterson
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A high breakdown voltage integrated circuit isolator device communicates a digital signal from a signal input on one semiconductor die to a signal output on another semiconductor die while providing high voltage isolation between the signal input and the signal output. Each die may include a respective capacitive isolation barrier structure that couple together via a bonding wire between combined top metal/bonding pads of the capacitive isolation barrier structures.
Public/Granted literature
- US20130001738A1 HIGH BREAKDOWN VOLTAGE INTEGRATED CIRCUIT ISOLATION STRUCTURE Public/Granted day:2013-01-03
Information query
IPC分类:
