Invention Grant
- Patent Title: Control device of semiconductor device
- Patent Title (中): 半导体器件的控制装置
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Application No.: US13229675Application Date: 2011-09-10
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Publication No.: US08643102B2Publication Date: 2014-02-04
- Inventor: Takayuki Hashimoto , Masahiro Masunaga
- Applicant: Takayuki Hashimoto , Masahiro Masunaga
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2010-202732 20100910; JP2011-77681 20110331
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A control device of a semiconductor device is provided. The control device of a semiconductor device is capable of reducing both ON resistance and feedback capacitance in a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode is provided. In the control device controlling driving of a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode is provided, a signal of tuning ON or OFF is outputted to a gate electrode in a state of outputting a signal of turning OFF to the second gate electrode.
Public/Granted literature
- US20120061722A1 CONTROL DEVICE OF SEMICONDUCTOR DEVICE Public/Granted day:2012-03-15
Information query
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