Invention Grant
- Patent Title: Terminal structure, electronic device, and manufacturing method thereof
- Patent Title (中): 端子结构,电子器件及其制造方法
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Application No.: US12908518Application Date: 2010-10-20
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Publication No.: US08642899B2Publication Date: 2014-02-04
- Inventor: Toshiji Hamatani , Tomoyuki Aoki , Hiroki Adachi , Hiroyuki Yajima
- Applicant: Toshiji Hamatani , Tomoyuki Aoki , Hiroki Adachi , Hiroyuki Yajima
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2009-241992 20091021
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H05K3/10

Abstract:
A method for manufacturing an electronic device comprising a terminal provided with a conductor which penetrates a cured prepreg is provided. At least one opening is formed in the prepreg. The prepreg is attached to a substrate over which an electronic element is formed so that the conductor included in the terminal overlaps with the opening. A conductive paste is provided in a region of the prepreg where the opening is provided. Part of the conductive paste flows into the opening to be in contact with the conductor included in the terminal. Then, heat treatment is performed so that the conductive paste and the prepreg are cured. In the process for manufacturing the terminal, it is not necessary to perform a step of forming an opening with a laser beam after the prepreg is cured. Thus, an adverse effect of a laser beam on the electronic element can be eliminated.
Public/Granted literature
- US20110090656A1 TERMINAL STRUCTURE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-04-21
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