Fuse of semiconductor device and method of forming the same

Invention Grant

US08642399B2 Fuse of semiconductor device and method of forming the same 有权

Title translation: 半导体器件的保险丝及其形成方法

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Patent Title: Fuse of semiconductor device and method of forming the same
Patent Title (中): 半导体器件的保险丝及其形成方法
Application No.: US13368303

Application Date: 2012-02-07
Publication No.: US08642399B2

Publication Date: 2014-02-04
Inventor: Hyung Kyu Kim
Applicant: Hyung Kyu Kim
Applicant Address: KR Icheon
Assignee: Hynix Semiconductor Inc.
Current Assignee: Hynix Semiconductor Inc.
Current Assignee Address: KR Icheon
Priority: KR10-2009-0069431 20090729
Main IPC: H01L21/82
IPC: H01L21/82

Fuse of semiconductor device and method of forming the same

Abstract:

A fuse of a semiconductor device includes first fuse metals formed over an underlying structure and a second fuse metal formed between the first fuse metals. Accordingly, upon blowing, the fuse metals are not migrated under conditions, such as specific temperature and specific humidity. Thus, reliability of a semiconductor device can be improved.

Abstract(Chinese):

半导体器件的熔丝包括形成在下面结构上的第一熔丝金属和形成在第一熔丝金属之间的第二熔丝金属。因此，在吹制时，熔融金属在诸如特定温度和比湿度的条件下不迁移。因此，可以提高半导体器件的可靠性。

Public/Granted literature

US20120133019A1 FUSE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2012-05-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路