Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12536712Application Date: 2009-08-06
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Publication No.: US08642389B2Publication Date: 2014-02-04
- Inventor: Thomas Wowra , Joachim Mahler , Manfred Mengel
- Applicant: Thomas Wowra , Joachim Mahler , Manfred Mengel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The method comprises providing multiple chips attached to a first carrier, stretching the first carrier so that the distance between adjacent ones of the multiple chips is increased, and applying a laminate to the multiple chips and the stretched first carrier to form a first workpiece embedding the multiple chips, the first workpiece having a first main face facing the first carrier and a second main face opposite to the first main face.
Public/Granted literature
- US20110031602A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2011-02-10
Information query
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