Invention Grant
- Patent Title: Method of producing conductive thin film
- Patent Title (中): 导电薄膜的制造方法
-
Application No.: US13110862Application Date: 2011-05-18
-
Publication No.: US08642377B2Publication Date: 2014-02-04
- Inventor: Ching-Fuh Lin , Ming-Shiun Lin
- Applicant: Ching-Fuh Lin , Ming-Shiun Lin
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Agency: Stout, Uxa, Buyan & Mullins, LLP
- Priority: TW100106318A 20110225
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/3205 ; H01L21/4763 ; H01L21/44
Abstract:
An embodiment of this invention provides a method to produce a conductive thin film, which comprises: providing a substrate; forming a first metal oxide layer on the substrate; forming an indium-free metal layer on the first metal oxide layer; and forming a second metal oxide layer on the indium-free layer, wherein the first metal oxide layer, the indium-free metal layer, and the second oxide layer are all solution processed.
Public/Granted literature
- US20120220069A1 METHOD OF PRODUCING CONDUCTIVE THIN FILM Public/Granted day:2012-08-30
Information query
IPC分类:
