Invention Grant
- Patent Title: Method for producing light-emitting diode device
- Patent Title (中): 发光二极管装置的制造方法
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Application No.: US13403467Application Date: 2012-02-23
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Publication No.: US08642362B2Publication Date: 2014-02-04
- Inventor: Hisataka Ito , Yasushi Inoue , Sadahito Misumi
- Applicant: Hisataka Ito , Yasushi Inoue , Sadahito Misumi
- Applicant Address: JP Osaka
- Assignee: Nitto Denko Corporation
- Current Assignee: Nitto Denko Corporation
- Current Assignee Address: JP Osaka
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-038702 20110224
- Main IPC: H01L33/52
- IPC: H01L33/52

Abstract:
A method for producing a light-emitting diode device includes the steps of: preparing a light-emitting laminate including an optical semiconductor layer, and an electrode unit formed on the optical semiconductor layer; forming an encapsulating resin layer on the optical semiconductor layer so as to cover the electrode unit, the encapsulating resin layer containing a light reflection component; partially removing the encapsulating resin layer so as to expose the top face of the electrode unit, thereby producing a light-emitting diode element; and disposing the light-emitting diode element and a base substrate provided with terminals so that the light-emitting diode element and the base substrate face each other, and that the electrode unit and the terminals are electrically connected, thereby flip chip mounting the light-emitting diode element on the base substrate.
Public/Granted literature
- US20120220059A1 METHOD FOR PRODUCING LIGHT-EMITTING DIODE DEVICE Public/Granted day:2012-08-30
Information query
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