Invention Grant
US08527690B2 Optimization of non-volatile solid-state memory by moving data based on data generation and memory wear
有权
通过基于数据生成和内存磨损移动数据来优化非易失性固态存储器
- Patent Title: Optimization of non-volatile solid-state memory by moving data based on data generation and memory wear
- Patent Title (中): 通过基于数据生成和内存磨损移动数据来优化非易失性固态存储器
-
Application No.: US12146968Application Date: 2008-06-26
-
Publication No.: US08527690B2Publication Date: 2013-09-03
- Inventor: James R Hamilton , Michael R Fortin , Mike Neil , Burton J Smith
- Applicant: James R Hamilton , Michael R Fortin , Mike Neil , Burton J Smith
- Applicant Address: US WA Redmond
- Assignee: Microsoft Corporation
- Current Assignee: Microsoft Corporation
- Current Assignee Address: US WA Redmond
- Agency: Lee & Hayes, PLLC
- Main IPC: G06F13/00
- IPC: G06F13/00
Abstract:
An exemplary method includes writing data to locations in non-volatile solid-state memory and deciding whether to move data written to one location in the memory to another location in the memory based on generation of the data and wear of the other location. Such a method may be used for non-volatile random access memory (NVRAM). Various other methods, devices, systems, etc., are also disclosed.
Public/Granted literature
- US20090327580A1 OPTIMIZATION OF NON-VOLATILE SOLID-STATE MEMORY BY MOVING DATA BASED ON DATA GENERATION AND MEMORY WEAR Public/Granted day:2009-12-31
Information query
