Invention Grant
- Patent Title: Methods and systems for lithography process window simulation
- Patent Title (中): 光刻工艺窗口模拟方法与系统
-
Application No.: US13494773Application Date: 2012-06-12
-
Publication No.: US08527255B2Publication Date: 2013-09-03
- Inventor: Jun Ye , Yu Cao , Hanying Feng
- Applicant: Jun Ye , Yu Cao , Hanying Feng
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method of efficient simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process.
Public/Granted literature
- US20120253774A1 Methods and Systems for Lithography Process Window Simulation Public/Granted day:2012-10-04
Information query