Invention Grant
- Patent Title: Multi-channel semiconductor integrated circuit devices for controlling direct current generators and memory systems including the same
- Patent Title (中): 用于控制直流发电机和包括其的存储器系统的多通道半导体集成电路器件
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Application No.: US12878431Application Date: 2010-09-09
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Publication No.: US08526262B2Publication Date: 2013-09-03
- Inventor: Jang-Woo Ryu , Jung Sik Kim , So-Young Kim
- Applicant: Jang-Woo Ryu , Jung Sik Kim , So-Young Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2009-0091170 20090925
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
Multi-channel semiconductor integrated circuit devices are provided including a plurality of memory devices that are independently accessible, each of the plurality of memory devices including at least one power generation unit and a control unit for controlling an operation of the at least one power generation unit, a detection unit for detecting an operation state of the plurality of memory devices, and a common control unit for commonly controlling an operation of the at least one power generation unit of the plurality of memory devices, according to the operation state of the plurality of memory devices detected by the detection unit. The control unit of each of the plurality of memory devices controls the operation of the at least one power generation unit of a corresponding one of the plurality of memory devices.
Public/Granted literature
Information query