Invention Grant
- Patent Title: Memory arrays and methods of operating memory
- Patent Title (中): 内存阵列和操作内存的方法
-
Application No.: US12896487Application Date: 2010-10-01
-
Publication No.: US08526238B2Publication Date: 2013-09-03
- Inventor: Violante Moschiano , Giovanni Santin
- Applicant: Violante Moschiano , Giovanni Santin
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/26
Abstract:
Apparatus and methods for determining pass/fail condition of memories are disclosed. In at least one embodiment, a set of common lines, one for each rank of page buffers corresponding to a page, determine the pass/fail status of all connected memory cells, and the pass/fail status results for each line can be combined to determine a pass/fail for the page of memory.
Public/Granted literature
- US20120081972A1 MEMORY ARRAYS AND METHODS OF OPERATING MEMORY Public/Granted day:2012-04-05
Information query
