A nonvolatile memory device that employs a variable resistive element includes: a memory cell array having a plurality of memory cells; a first circuit block that is disposed at one side of the memory cell array and performs a first operation on the memory cells; a second circuit block that is disposed at the other side of the memory cell array and performs a second operation on the memory cells, wherein the second operation is different from the first operation; and a redundancy block that is disposed closer to the second circuit block than the first circuit block, and which compares a repair address of a repaired memory cell among the plurality of memory cells with an input address to then generate a redundancy control signal, and to supply the redundancy control signal to the first circuit block and the second circuit block.