Invention Grant
- Patent Title: Current control apparatus and phase change memory having the same
- Patent Title (中): 电流控制装置和相变存储器
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Application No.: US12983244Application Date: 2010-12-31
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Publication No.: US08526226B2Publication Date: 2013-09-03
- Inventor: Sang Kug Lym , Yoon Jae Shin
- Applicant: Sang Kug Lym , Yoon Jae Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2010-0106277 20101028
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A current control apparatus of a phase change memory includes a temperature sensing block having an output voltage level which varies depending on temperature of an internal circuit and a write driver configured to control an amount of program current provided to a memory cell in response to the output voltage level of the temperature sensing block.
Public/Granted literature
- US20120106243A1 CURRENT CONTROL APPARATUS AND PHASE CHANGE MEMORY HAVING THE SAME Public/Granted day:2012-05-03
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