Invention Grant
- Patent Title: Compound cell spin-torque magnetic random access memory
- Patent Title (中): 复合细胞自旋转矩磁随机存取存储器
-
Application No.: US13662813Application Date: 2012-10-29
-
Publication No.: US08526224B2Publication Date: 2013-09-03
- Inventor: Thomas William Clinton , Werner Scholz
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.
Public/Granted literature
- US20130051135A1 COMPOUND CELL SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2013-02-28
Information query
