Invention Grant
- Patent Title: Phase change random access memory device and related methods of operation
- Patent Title (中): 相变随机存取存储器件及相关操作方法
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Application No.: US13655666Application Date: 2012-10-19
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Publication No.: US08526223B2Publication Date: 2013-09-03
- Inventor: Hye-jin Kim , Kwang-jin Lee , Du-eung Kim
- Applicant: Hye-jin Kim , Kwang-jin Lee , Du-eung Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0083544 20060831
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A method of operating a phase change random access memory (PRAM) device includes performing a program operation to store data in selected PRAM cells of the device, wherein the program operation comprises a plurality of sequential program loops. The method further comprises suspending the program operation in the middle of the program operation, and after suspending the program operation, resuming the program operation in response to a resume command.
Public/Granted literature
- US20130039124A1 PHASE CHANGE RANDOM ACCESS MEMORY DEVICE AND RELATED METHODS OF OPERATION Public/Granted day:2013-02-14
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