Invention Grant
US08526220B2 Complementary SOI lateral bipolar for SRAM in a low-voltage CMOS platform
有权
在低电压CMOS平台中用于SRAM的互补SOI横向双极性
- Patent Title: Complementary SOI lateral bipolar for SRAM in a low-voltage CMOS platform
- Patent Title (中): 在低电压CMOS平台中用于SRAM的互补SOI横向双极性
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Application No.: US13158420Application Date: 2011-06-12
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Publication No.: US08526220B2Publication Date: 2013-09-03
- Inventor: Jin Cai , Tak H. Ning
- Applicant: Jin Cai , Tak H. Ning
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ido Tuchman; Louis J. Percello
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
An example embodiment is a memory cell including a SOI substrate. A first and second set of lateral bipolar transistors are fabricated on the SOI substrate. The first and second set of lateral bipolar transistors are electrically coupled to form two inverters. The inverters are cross coupled to form a memory element.
Public/Granted literature
- US20120314485A1 COMPLEMENTARY SOI LATERAL BIPOLAR FOR SRAM IN A LOW-VOLTAGE CMOS PLATFORM Public/Granted day:2012-12-13
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