Invention Grant
US08526147B2 High voltage tolerant SCR clamp with avalanche diode triggering circuit
有权
具有雪崩二极管触发电路的高耐压SCR钳位
- Patent Title: High voltage tolerant SCR clamp with avalanche diode triggering circuit
- Patent Title (中): 具有雪崩二极管触发电路的高耐压SCR钳位
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Application No.: US13065744Application Date: 2011-03-28
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Publication No.: US08526147B2Publication Date: 2013-09-03
- Inventor: Antonio Gallerano , Vladislav Vashchenko
- Applicant: Antonio Gallerano , Vladislav Vashchenko
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H02H9/04
- IPC: H02H9/04
Abstract:
In an LVTSCR, an avalanche diode based control circuit controls both the base of the internal PNP of the LVTSCR as well as the gate of the LVTSCR.
Public/Granted literature
- US20120250194A1 High voltage tolerant SCR clamp with avalanche diod triggering circuit Public/Granted day:2012-10-04
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