Invention Grant
- Patent Title: Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus
- Patent Title (中): 固态成像装置，制造固态成像装置的方法和成像装置
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Application No.: US12509995Application Date: 2009-07-27
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Publication No.: US08525909B2Publication Date: 2013-09-03
- Inventor: Takuji Matsumoto , Keiji Tatani , Yasushi Tateshita , Kazuichiro Itonaga
- Applicant: Takuji Matsumoto , Keiji Tatani , Yasushi Tateshita , Kazuichiro Itonaga
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2008-199520 20080801; JP2009-009523 20090120
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H01L31/062
Abstract:
A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of a MOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of a MOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.
Public/Granted literature
- US20100026866A1 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS Public/Granted day:2010-02-04
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