Invention Grant
- Patent Title: Solid-state image sensing device
- Patent Title (中): 固态摄像装置
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Application No.: US13151089Application Date: 2011-06-01
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Publication No.: US08525901B2Publication Date: 2013-09-03
- Inventor: Yoshitaka Egawa
- Applicant: Yoshitaka Egawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-307257 20061113
- Main IPC: H04N5/228
- IPC: H04N5/228 ; H04N9/73 ; H04N5/235 ; H03M1/12

Abstract:
There is provided a solid-state image sensing device including a pixel section in which cells are arrayed, each cell including a photoelectric conversion unit, a reading circuit reading out, to a detection unit, signal charges obtained by the photoelectric conversion unit, an amplifying circuit amplifying and outputting a voltage corresponding to the signal charges, and a reset circuit resetting the signal charges, an exposure time control circuit controlling an exposure time and controlling the exposure time to be equal for all cells, an A/D conversion circuit A/D-converting a signal output from the pixel section by changing a resolution of a signal level, line memories storing an A/D-converted signal, and a signal processing circuit processing output signals from the line memories to have a linear gradient with respect to an optical input signal amount by controlling an amplification factor in accordance with a resolution of a pixel output signal after A/D-conversion.
Public/Granted literature
- US20110228130A1 SOLID-STATE IMAGE SENSING DEVICE Public/Granted day:2011-09-22
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