A semiconductor device that may control a formation of a channel is disclosed. The semiconductor device includes a gate region including a first area, an insulating layer disposed on portions of a top surface of the gate region corresponding to both ends portions of the first area, first and second electrodes formed on the insulating layer to be spaced apart from each other, an elastic conductive layer disposed between the first and second electrodes and the insulating layer and having a shape that varies according to an electrostatic force based on voltages applied to the first electrode, the second electrode, and the gate region, and a gate insulating region disposed between the elastic conductive layer and the first area of the gate region.