Invention Grant
US08524616B2 Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control
有权
非化学计量CVD介电膜表面钝化方法，用于薄膜粗糙度控制
- Patent Title: Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control
- Patent Title (中): 非化学计量CVD介电膜表面钝化方法，用于薄膜粗糙度控制
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Application No.: US12577486Application Date: 2009-10-12
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Publication No.: US08524616B2Publication Date: 2013-09-03
- Inventor: Lance Kim , Kwanghoon Kim
- Applicant: Lance Kim , Kwanghoon Kim
- Applicant Address: US AZ Chandler
- Assignee: Microchip Technology Incorporated
- Current Assignee: Microchip Technology Incorporated
- Current Assignee Address: US AZ Chandler
- Agency: King & Spalding L.L.P.
- Main IPC: H01L21/469
- IPC: H01L21/469
Abstract:
A method is provided for reducing film surface roughness in Chemical Vapor Deposition (CVD) of dielectric films. The method may include removing dangling bonds from a film surface of a CVD dielectric film by a reactant. For reducing a surface roughness of a dielectric film, a further method may passivate a nonstoichiometric film surface of the dielectric film, or of a previous dielectric film, or of the dielectric film and of a previous dielectric film, by a reactant gas in the vapor environment. The dielectric film may include at least one out of the following group: ultraviolet light transparent Silicon Nitride (UVSIN), Silicon Rich Oxide (SRO), Silicon Dioxide (SiO2), Silicon Nitride (Si3N4), Phosphosilicate Glass (PSG), or Silicon Oxynitride (SiON) The reactant gas may include at least one out of the following group: Ammonia (NH3), Hydrogen (H2), Nitrous Oxide (N2O), or Oxygen (O2).
Public/Granted literature
- US20100120261A1 Method of Nonstoichiometric CVD Dielectric Film Surface Passivation for Film Roughness Control Public/Granted day:2010-05-13
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