Invention Grant
US08524614B2 III-V compound semiconductor material passivation with crystalline interlayer
有权
III-V化合物半导体材料钝化与晶体中间层
- Patent Title: III-V compound semiconductor material passivation with crystalline interlayer
- Patent Title (中): III-V化合物半导体材料钝化与晶体中间层
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Application No.: US12955203Application Date: 2010-11-29
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Publication No.: US08524614B2Publication Date: 2013-09-03
- Inventor: Kuen-Ting Shiu , Dechao Guo , Shu-Jen Han , Edward W. Kiewra , Masaharu Kobayashi
- Applicant: Kuen-Ting Shiu , Dechao Guo , Shu-Jen Han , Edward W. Kiewra , Masaharu Kobayashi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent H. Daniel Schnurmann
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
The present disclosure reduces and, in some instances, eliminates the density of interface states in III-V compound semiconductor materials by providing a thin crystalline interlayer onto an upper surface of a single crystal III-V compound semiconductor material layer to protect the crystallinity of the single crystal III-V compound semiconductor material layer's surface atoms prior to further processing of the structure.
Public/Granted literature
- US20120132913A1 III-V Compound Semiconductor Material Passivation With Crystalline Interlayer Public/Granted day:2012-05-31
Information query
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