Invention Grant
- Patent Title: Chemical mechanical planarization with overburden mask
- Patent Title (中): 化学机械平面化与上覆层掩模
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Application No.: US13012821Application Date: 2011-01-25
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Publication No.: US08524606B2Publication Date: 2013-09-03
- Inventor: Leslie Charns , John M. Cotte , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
- Applicant: Leslie Charns , John M. Cotte , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
- Applicant Address: US NY Armonk JP Tokyo
- Assignee: International Business Machines Corporation,JSR Corporation
- Current Assignee: International Business Machines Corporation,JSR Corporation
- Current Assignee Address: US NY Armonk JP Tokyo
- Agency: Tutunjian & Bitetto, P.C.
- Agent Catherine Ivers
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
Planarization methods include depositing a mask material on top of an overburden layer on a semiconductor wafer. The mask material is planarized to remove the mask material from up areas of the overburden layer to expose the overburden layer without removing the mask material from down areas. The exposed overburden layer is wet etched and leaves a thickness remaining over an underlying layer. Remaining portions of the mask layer and the exposed portions of the overburden layer are planarized to expose the underlying layer.
Public/Granted literature
- US20120083125A1 Chemical Mechanical Planarization With Overburden Mask Public/Granted day:2012-04-05
Information query
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