A method and structure comprise a field effect transistor structure that includes a first rectangular fin structure position on a substrate. The first rectangular fin structure has a bottom contacting the substrate, a top opposite the bottom, and sides between the top and the bottom. The structure additionally includes a second rectangular fin structure position on the substrate. Similarly, the second rectangular fin structure also has a bottom contacting the substrate, a top opposite the bottom, and sides between the top and the bottom. The sides of the second rectangular fin structure are parallel to the sides of the first rectangular fin structure. Further, a trench insulator is positioned on the substrate and is positioned between a side of the first rectangular fin structure and a side of the second rectangular fin structure. Additionally, a gate conductor is positioned on the trench insulator, positioned over the sides and the top of the first rectangular fin structure, and positioned over the sides and the top of the second rectangular fin structure. The gate conductor runs perpendicular to the sides of the first rectangular fin structure and the sides of the second rectangular fin structure. Also, a gate insulator is positioned between the gate conductor and the first rectangular fin structure and between the gate conductor and the second rectangular fin structure. The structure further includes a first cap on the top of the first rectangular fin structure. The first cap separates the gate conductor from the first rectangular fin structure.