Invention Grant
US08524439B2 Silsesquioxane resin systems with base additives bearing electron-attracting functionalities
有权
倍半硅氧烷树脂体系，具有电子吸引功能的基础添加剂
- Patent Title: Silsesquioxane resin systems with base additives bearing electron-attracting functionalities
- Patent Title (中): 倍半硅氧烷树脂体系，具有电子吸引功能的基础添加剂
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Application No.: US12304263Application Date: 2007-06-27
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Publication No.: US08524439B2Publication Date: 2013-09-03
- Inventor: Sanlin Hu , Eric Scott Moyer
- Applicant: Sanlin Hu , Eric Scott Moyer
- Applicant Address: US MI Midland JP Kawasaki-Shi, Kanagawa
- Assignee: Dow Corning Corporation,Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee: Dow Corning Corporation,Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee Address: US MI Midland JP Kawasaki-Shi, Kanagawa
- Agency: Blank Rome LLP
- International Application: PCT/US2007/072222 WO 20070627
- International Announcement: WO2008/002970 WO 20080103
- Main IPC: G03F7/039
- IPC: G03F7/039
Abstract:
A silsesquioxane-based composition that contains (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.
Public/Granted literature
- US20090312467A1 SILSESQUIOXANE RESIN SYSTEMS WITH BASE ADDITIVES BEARING ELECTRON-ATTRACTING FUNCTIONALITIES Public/Granted day:2009-12-17
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