Invention Grant
US08524366B2 Graphene wafer, method for manufacturing the graphene wafer, method for releasing a graphene layer, and method for manufacturing a graphene device
有权
石墨烯晶片，石墨烯晶片的制造方法，石墨烯层的脱模方法以及石墨烯装置的制造方法
- Patent Title: Graphene wafer, method for manufacturing the graphene wafer, method for releasing a graphene layer, and method for manufacturing a graphene device
- Patent Title (中): 石墨烯晶片，石墨烯晶片的制造方法，石墨烯层的脱模方法以及石墨烯装置的制造方法
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Application No.: US12801720Application Date: 2010-06-22
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Publication No.: US08524366B2Publication Date: 2013-09-03
- Inventor: Mitsuhiko Ogihara , Tomohiko Sagimori , Masaaki Sakuta , Akihiro Hashimoto , Satoru Tanaka
- Applicant: Mitsuhiko Ogihara , Tomohiko Sagimori , Masaaki Sakuta , Akihiro Hashimoto , Satoru Tanaka
- Applicant Address: JP Tokyo
- Assignee: Oki Data Corporation
- Current Assignee: Oki Data Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2009-148308 20090623
- Main IPC: B32B9/00
- IPC: B32B9/00
Abstract:
A method is used for releasing a graphene layer from a substrate. A graphene layer is first formed on a surface of a first substrate. A metal layer is then formed on a surface of the graphene layer. A pulling force is then applied to the metal layer to detach the graphene layer from the first substrate. The released graphene layer is bonded by intermolecular force onto a surface of a second substrate separate from the first substrate or onto a surface of a bonding layer formed on the surface of the second substrate. The metal layer is then removed, by for example, etching.
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