Invention Grant
US08524111B2 CMP abrasive slurry for polishing insulation film, polishing method, and semiconductor electronic part polished by the polishing method
有权
用于抛光绝缘膜的CMP磨料浆料，抛光方法和通过抛光方法抛光的半导体电子部件
- Patent Title: CMP abrasive slurry for polishing insulation film, polishing method, and semiconductor electronic part polished by the polishing method
- Patent Title (中): 用于抛光绝缘膜的CMP磨料浆料，抛光方法和通过抛光方法抛光的半导体电子部件
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Application No.: US12162662Application Date: 2007-01-31
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Publication No.: US08524111B2Publication Date: 2013-09-03
- Inventor: Masato Fukasawa , Kazuhiro Enomoto , Chiaki Yamagishi , Naoyuki Koyama
- Applicant: Masato Fukasawa , Kazuhiro Enomoto , Chiaki Yamagishi , Naoyuki Koyama
- Applicant Address: JP Tokyo
- Assignee: Hitachi Chemical Company, Ltd.
- Current Assignee: Hitachi Chemical Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JPP2006-022354 20060131; JPP2006-057717 20060303
- International Application: PCT/JP2007/051545 WO 20070131
- International Announcement: WO2007/088868 WO 20070809
- Main IPC: C09K13/00
- IPC: C09K13/00 ; H01L21/302
Abstract:
The present invention provides a CMP abrasive slurry for polishing insulation film, that allow efficiently and high-speed polishing of insulation films such as SiO2 film and SiOC film in the CMP method of flattening an interlayer insulation film, a BPSG film, an insulation film for shallow trench isolation, or a wiring-insulating film layer, a polishing method by using the abrasive slurry, and a semiconductor electronic part polished by the polishing method. A CMP abrasive slurry for polishing insulation film containing cerium oxide particles, a dispersant, a water-soluble polymer having amino groups on the side chains and water, a polishing method by using the CMP abrasive slurry, and a semiconductor electronic part polished by the polishing method.
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