Invention Grant
- Patent Title: Component in processing chamber of substrate processing apparatus and method of measuring temperature of the component
- Patent Title (中): 基板处理装置的处理室中的部件和部件的温度测量方法
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Application No.: US13432617Application Date: 2012-03-28
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Publication No.: US08523428B2Publication Date: 2013-09-03
- Inventor: Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
- Applicant: Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2011-069838 20110328
- Main IPC: G01K13/00
- IPC: G01K13/00

Abstract:
A component in a processing chamber of a substrate processing apparatus, where a temperature may be accurately measured by using a temperature measuring apparatus using an interference of a low-coherence light, even when a front surface and a rear surface are not parallel due to abrasion, or the like. A focus ring used in a vacuum atmosphere and of which a temperature is measured includes an abrasive surface exposed to an abrasive atmosphere according to plasma, a nonabrasive surface not exposed to the abrasive atmosphere, a thin-walled portion including a top surface and a bottom surface that are parallel to each other, and a coating member coating the top surface of the thin-walled portion, wherein a mirror-like finishing is performed on each of the top and bottom surfaces of the thin-walled portion.
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