Invention Grant
US08522411B1 Method to control BAW resonator top electrode edge during patterning
有权
在图案化期间控制BAW谐振器顶部电极边缘的方法
- Patent Title: Method to control BAW resonator top electrode edge during patterning
- Patent Title (中): 在图案化期间控制BAW谐振器顶部电极边缘的方法
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Application No.: US12564723Application Date: 2009-09-22
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Publication No.: US08522411B1Publication Date: 2013-09-03
- Inventor: Guillaume Bouche , Ralph N. Wall
- Applicant: Guillaume Bouche , Ralph N. Wall
- Applicant Address: US OR Hillsboro
- Assignee: TriQuint Semiconductor, Inc.
- Current Assignee: TriQuint Semiconductor, Inc.
- Current Assignee Address: US OR Hillsboro
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H04R17/10
- IPC: H04R17/10 ; H05K3/06

Abstract:
A method of fabricating a piezoelectric resonator includes providing a bottom electrode and a piezoelectric layer coupled to the bottom electrode. A bottom metal layer of a top electrode is deposited on the piezoelectric layer. A top metal layer of the top electrode is deposited on the bottom metal layer. A photoresist layer is deposited on the top metal layer. The photoresist layer is patterned and etched. The top metal layer is patterned and etched while the etched photoresist layer remains. The bottom metal layer is patterned and etched such that an entire perimeter side surface of the top metal layer is recessed relative to a perimeter edge of the bottom metal layer. The etched photoresist layer is removed. A passivation layer is deposited on the top and bottom metal layers such that the top and bottom metal layers are isolated from a subsequent metal etch step.
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