Invention Grant
- Patent Title: Light emitting diode and method for manufacture of the same
- Patent Title (中): 发光二极管及其制造方法
-
Application No.: US13308146Application Date: 2011-11-30
-
Publication No.: US08502256B2Publication Date: 2013-08-06
- Inventor: Sang Youl Lee
- Applicant: Sang Youl Lee
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2006-0092732 20060925
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
Disclosed is a light emitting device. The light emitting device includes a substrate, a semiconductor layer on the substrate, and an electrode on the semiconductor layer, wherein the substrate has at least one side surface having a predetermined tilt angle with respect to a bottom surface of the substrate, wherein the predetermined tilt angle is an obtuse angle, and wherein a side surface of the semiconductor layer disposes vertically.
Public/Granted literature
- US20120074382A1 LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURE OF THE SAME Public/Granted day:2012-03-29
Information query
IPC分类: