Invention Grant
- Patent Title: Capacitor, semiconductor device and manufacturing method thereof
- Patent Title (中): 电容器，半导体器件及其制造方法
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Application No.: US12077161Application Date: 2008-03-14
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Publication No.: US08502232B2Publication Date: 2013-08-06
- Inventor: Satoshi Murakami , Yoshiharu Hirakata , Etsuko Fujimoto , Yu Yamazaki , Shunpei Yamazaki
- Applicant: Satoshi Murakami , Yoshiharu Hirakata , Etsuko Fujimoto , Yu Yamazaki , Shunpei Yamazaki
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP11-134992 19990514
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is characterized in that a pin hole 106 formed by chance in the dielectric 103 is filled up with an insulating material (filler) 107 made of a resin material. This can prevent short circuit between the first conductive film 102 and the second conductive film 104. The capacitor is used as a storage capacitor provided in a pixel of a semiconductor device.
Public/Granted literature
- US20080174710A1 Capacitor, semiconductor device and manufacturing method thereof Public/Granted day:2008-07-24
Information query
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