Invention Grant
- Patent Title: Silicon dioxide thin films by ALD
- Patent Title (中): 二氧化硅薄膜通过ALD
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Application No.: US12340551Application Date: 2008-12-19
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Publication No.: US08501637B2Publication Date: 2013-08-06
- Inventor: Raija H. Matero , Suvi P. Haukka
- Applicant: Raija H. Matero , Suvi P. Haukka
- Applicant Address: NL
- Assignee: ASM International N.V.
- Current Assignee: ASM International N.V.
- Current Assignee Address: NL
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L21/26
- IPC: H01L21/26
Abstract:
Methods are provided for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD. By using disilane compounds as the silicon source, good deposition rates and uniformity are obtained.
Public/Granted literature
- US20090209081A1 Silicon Dioxide Thin Films by ALD Public/Granted day:2009-08-20
Information query
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