Invention Grant
US08501618B2 Semiconductor device and method of forming RDL wider than contact pad along first axis and narrower than contact pad along second axis
有权
半导体器件和沿着第一轴形成RDL比接触焊盘宽的第二轴的窄接触焊盘的方法
- Patent Title: Semiconductor device and method of forming RDL wider than contact pad along first axis and narrower than contact pad along second axis
- Patent Title (中): 半导体器件和沿着第一轴形成RDL比接触焊盘宽的第二轴的窄接触焊盘的方法
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Application No.: US13181290Application Date: 2011-07-12
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Publication No.: US08501618B2Publication Date: 2013-08-06
- Inventor: Yaojian Lin , Xia Feng , Jianmin Fang , Kang Chen
- Applicant: Yaojian Lin , Xia Feng , Jianmin Fang , Kang Chen
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins & Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A semiconductor device has a semiconductor die and first conductive layer formed over a surface of the semiconductor die. A first insulating layer is formed over the surface of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. An opening is formed in the second insulating layer over the first conductive layer. A second conductive layer is formed in the opening over the first conductive layer and second insulating layer. The second conductive layer has a width that is less than a width of the first conductive layer along a first axis. The second conductive layer has a width that is greater than a width of the first conductive layer along a second axis perpendicular to the first axis. A third insulating layer is formed over the second conductive layer and first insulating layer.
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