Invention Grant
- Patent Title: Substrate processing apparatus and substrate processing method
- Patent Title (中): 基板加工装置及基板处理方法
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Application No.: US12087479Application Date: 2007-02-21
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Publication No.: US08501599B2Publication Date: 2013-08-06
- Inventor: Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
- Applicant: Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-061318 20060307
- International Application: PCT/JP2007/053151 WO 20070221
- International Announcement: WO2007/105431 WO 20070920
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H05B1/02 ; C23C16/00

Abstract:
A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.
Public/Granted literature
- US20090029486A1 Substrate Processing Apparatus and Substrate Processing Method Public/Granted day:2009-01-29
Information query
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